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 MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Features
High RF Power Handling: > +40 dBm High Third Order Intercept: > +70 dBm Single Positive Supply: +3 to +10 Vdc Low Insertion Loss: 0.4 to 0.6 dB Ultra Small MSOP8G Package: 14.8 mm2
Typical Applications
The HMC484MS8G is ideal for: * Wireless Infrastructure * ISM/Cellular Portables/Handsets * Automotive Telematics * Mobile Radio * Test Equipment
Functional Diagram
General Description
The HMC484MS8G is a low-cost SPDT switch in an 8-lead MSOPG package for use in transmitreceive applications which require very low distortion at high input signal power levels, through 10 watts (+40 dBm). The device can control signals from DC to 3.0 GHz. The design provides exceptional intermodulation performance; > +70 dBm third order intercept at +5 volt bias. RF1 and RF2 are reflective shorts when "OFF". On-chip circuitry allows single positive supply operation from +3 Vdc to +10 Vdc at very low DC current with control inputs compatible with CMOS and most TTL logic families.
14
SWITCHES - SMT
Electrical Specifications,
Parameter
TA = +25 C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System
Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 26 Min. Typ. 0.4 0.6 0.8 0.9 30 24 20 17 13 32 36 39 32 37 40 35.5 40 >40 72 70 Max. 0.6 0.8 1.1 1.3 Units dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm
Insertion Loss
Isolation
Return Loss (On State)
Input Power for 0.1dB Compression
0.5 - 3.0 GHz
Input Power for 1dB Compression
0.5 - 3.0 GHz
Input Third Order Intercept (Two-tone input power = +30 dBm each tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
0.5 - 1.0 GHz 0.5 - 3.0 GHz
DC - 3.0 GHz
15 40
ns ns
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Insertion Loss vs. Temperature
0 -0.5 INSERTION LOSS (dB) -1
Isolation
0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 -35 -40 -45
RF1 RF2
-1.5 -2
-2.5 -3 0 0.5 1 1.5 2 2.5
+25 C +85 C -40 C
-50 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) FREQUENCY (GHz)
Insertion Loss vs. Bias Voltage (Vdd)
0 -0.5 INSERTION LOSS (dB) -1
Isolation vs. Bias Voltage (Vdd)
0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 -35 -40 -45
+3 Volts +5 Volts +8 Volts +10 Volts
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SWITCHES - SMT
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-1.5 -2
+3 Volts +5 Volts +8 Volts +10 Volts
-2.5 -3 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
-50 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
Return Loss
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
RFC RF1, RF2
RF1 to RF2 Isolation
0 -5 -10 ISOLATION (dB) -15 -20 -25 -30 -35 -40 -45 -50 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
ALL OFF RF1 ON RF2 ON
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Input P0.1dB vs. Vdd
50
+3 Volts +5 Volts +8 Volts
Input P1dB @ Vdd = +5 Volts
45
45 INPUT P0.1dB (dBm)
40
INPUT P1dB (dBm)
40
35
35
30
30
+25 C +85 C -40 C
25 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
25 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
2nd & 3rd Harmonics @ 900 MHz, Vdd = +3 Volts
2nd & 3rd Harmonics @ 900 MHz, Vdd = +5 Volts
0 -10 -20 INSERTION LOSS (dB) -30 -40 HARMONICS (dBc) 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 30 INPUT POWER (dBm) 35
INSERTION LOSS F2 F3
14
INSERTION LOSS (dB)
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 INPUT POWER (dBm) 30
F2 F3 INSERTION LOSS
0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 40 HARMONICS (dBc)
-50 -60 -70 -80 -90 -100 -110 -120 35
SWITCHES - SMT
2nd & 3rd Harmonics @ 900 MHz, Vdd = +8 Volts
0 -0.2 -0.4 INSERTION LOSS (dB) -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 10 15 20 25 30 INPUT POWER (dBm) 35
INSERTION LOSS F2 F3
0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 40 HARMONICS (dBc)
Contact HMC Applications Group for input third order & input compression data from DC - 0.5 GHz.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Input IP3 @ Vdd = +3 Volts
50
Input IP3 @ Vdd = +5 Volts
80 75 INPUT IP3 (dBm) 70 65 60 55 50
+25 C +85 C -40 C
45 INPUT IP3 (dBm)
40
+25 C +85 C -40 C
35
30
25 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Input IP3 @ Vdd = +8 Volts
80 75 INPUT IP3 (dBm)
Input IP3 @ Vdd = +10 Volts
80 75 INPUT IP3 (dBm) 70 65 60 55 50
+25 C +85 C -40 C
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SWITCHES - SMT
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70 65 60 55 50 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz)
+25 C +85 C -40 C
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Input IP3 vs. Input Power @ 900 MHz
80 75 70 INPUT IP3 (dBm) 65 60 55 50 45 40 35 30 27 28 29 30 31 32 33 TWO TONE INPUT POWER (dBm) (EACH TONE)
+3 Volts +5 Volts +8 Volts +10 Volts
Input IP3 vs. Input Power @ 1900 MHz
80 75 70 INPUT IP3 (dBm) 65 60 55 50 45 40 35 30 27 28 29 30 31 32 33 TWO TONE INPUT POWER (dBm) (EACH TONE)
+3 Volts +5 Volts +8 Volts +10 Volts
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Typical 0.5 to 3.0 GHz Compression vs. Bias Voltage (Vdd)
Bias Vdd (Volts) +3 +5 +8 +10 Input Power for 0.1 dB Compression (dBm) 32 36 39 >40 Input Power for 1.0 dB Compression (dBm) 35.5 40 >40 >40
Absolute Maximum Ratings
RF Input Power (Vctl = 0V/+8V) (0.5 - 3 GHz) Supply Voltage Range (Vdd) (Vctl = 0V) Control Voltage Range (A & B) Hot Switch Power Level (Vdd = +8V) Channel Temperature Continuous Pdiss (T = 85 C) (derate 25 mW/C above 85 C) Thermal Resistance Storage Temperature Operating Temperature +40 dBm (T = +85 C)
+13 Vdc Vdd - 13 Vdc to Vdd + 0.7 Vdc 39 dBm 150 C 1.6 W 40 C/W -65 to +150 C -40 to +85 C
Bias Voltage & Current
Vdd (Vdc) +3 +5 +8 Typical Idd (A) 0.5 10 50 75
14
SWITCHES - SMT
+10
Control Voltages
State Low High Bias Condition
Note: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest transmission frequency.
Truth Table
Control Input (Vctl) Signal Path State RFC to RF1 Off On Off RFC to RF2 On Off Off A B Low High Low
0 to +0.2 Vdc @ 10 A Typical Vdd 0.2 Vdc @ 10 A Typical High Low Low
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Typical Application Circuit
14
Notes: 1. Set logic gate and switch Vdd = +3V to +10V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +10 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V.
Pin Descriptions
Pin Number Function Description Interface Schematic
1
A
See truth table and control voltage table.
2
B
See truth table and control voltage table. This pin is DC coupled and matched to 50 Ohms. Blocking capacitors are required.
3, 5, 8
RFC, RF1, RF2
4
Vdd
Supply Voltage
6, 7
GND
Package bottom must also be connected to PCB RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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SWITCHES - SMT
MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Evaluation Circuit Board
14
SWITCHES - SMT
List of Material for Evaluation PCB 104124*
Item J1 - J3 J4 - J7 C1 - C3 C4 R1 - R3 U1 PCB** Description PC Mount SMA RF Connector DC Pin 100 pF capacitor, 0402 Pkg. 10 KpF capacitor, 0603 Pkg. 100 Ohm Resistor, 0402 Pkg. HMC484MS8G T/R Switch 104122 PCB
The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request.
** Circuit Board Material: Rogers 4350
*Reference this number when ordering complete evaluation PCB.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0404
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
Notes:
14
SWITCHES - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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